Imec reports on high-NA development progress

At this year’s SPIE Advanced Lithography Conference, Imec presented “significant progress in preparing the high-NA patterning ecosystem.” In 12 papers, advances are reported in developing patterning and etch processes, screening new resist and underlayer materials, improving metrology and photomask technology.

“Imec is partnering with ASML on high-NA technology as ASML is building its first prototype 0.55NA EUV lithography scanner EXE:5000. It’s Imec’s role, in tight collaboration with the global patterning ecosystem, to ensure timely availability of advanced resist materials, photomasks, metrology techniques, imaging strategies and patterning techniques – to fully benefit from the resolution gain offered by the high-NA EUV lithography scanner,” comments Imec CEO Luc Van den hove.

In anticipation of the first high-NA EUV prototyping system, Imec is pushing the resolution capability of current 0.33NA EUV patterning technologies to predict the performance of thinner resists for printing fine line/spaces and contact holes. In addition to pattern collapse, the institute identifies line-edge roughness (LER) as one of the most critical parameters for patterning lines/spaces with thin resist films, and proposes tuning illumination and mask conditions to mitigate pattern roughness.