Samsung Electronics is targeting deployment of high-NA EUV lithography in high-volume production at the 1nm/A10 node, a company executive said at the Next-Generation Lithography + Patterning Conference (NGL 2026) in Suwon (via ZDNet). That would put the insertion of the next-gen lithography technology at around 2030.
Originally, Samsung planned on using high-NA sooner. “We wanted to introduce high-NA EUV into volume production at the 2 nm and 1.4 nm nodes, but further technical improvements are still needed. We believe high-NA EUV will become necessary starting with A10 and beyond, and we’re conducting joint development with a variety of partners,” the Samsung delegate said.
Samsung is the second company to reveal a concrete high-NA timeline. Intel has already inserted high-NA in volume production, using the technology to manufacture a subset of Core Ultra Series 3 processors at the 18A node. TSMC has yet to reveal its plans, but has disclosed that the A13 and A12 nodes won’t be manufactured using high-NA. Both these nodes are slated for production in 2029.
