Samsung Electronics plans to become the first memory maker to introduce ASML’s high-NA EUV lithography into high-volume DRAM manufacturing, targeting production in 2028. The Korean firm expects the technology to extend the DRAM scaling roadmap by providing higher resolution, simplifying process flows and improving manufacturing efficiency.
Most of the question marks about who will adopt high-NA and when have now been filled in. Intel is a front-runner in logic with small-scale production already on the way and full deployment expected in 2028. Samsung and TSMC will follow in 2030. SK Hynix and Micron haven’t made their plans public.
