TSMC has confirmed that its 2nm-node technology has entered volume production in 4Q25 as planned. N2 features first-generation nanosheet transistor technology, also known as gate-all-around (GAA). TSMC claims a 10-15 percent performance gain at the same power, a 25-30 percent reduction in power at the same performance and an increase of up to 20 percent in transistor density compared to the existing N3E node.
TSMC’s standing as the uncontested market leader in the foundry space notwithstanding, fabless firms can currently choose from three 2nm-node processes: TSMC’s, Intel’s and Samsung’s. While Intel’s 18A process has entered volume manufacturing for internal use, it hasn’t attracted much interest from external customers. The status of Samsung’s 2nm progress is unknown, but reports suggest the Korean firm is upgrading its Texas fab from 4nm to 2nm to woo US customers. Of course, TSMC is the market leader in the foundry domain by a huge margin.
As always, keep in mind that node nomenclature isn’t strictly regulated: N2, 18A and 2nm are marketing terms.
