X‑Fab launches GaN-on-Si foundry services

Building on years of expertise in high-voltage GaN technology, X‑Fab Silicon Foundries has launched GaN-on-Si foundry services for depletion-mode (dMode) devices under its XG035 technology platform. The Tessenderlo-headquartered firm offers open-access multi-project wafer (MPW), prototyping and volume production from September 2025. The move expands on its offerings for wide-bandgap technologies, including SiC.

The GaN-on-Si process is hosted at X‑Fab’s 8-inch fab in Dresden, which features process tools adapted for thick GaN-on-Si wafers. The XG035 platform targets 100-650  V operation and is flexible enough to accommodate customer-specific modules, including eMode HEMTs and Schottky barrier diodes. The fab is automotive-qualified and optimized for analog-CMOS integration.